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Accession Number:
AD0612090
Title:
RADIATION DAMAGE IN SEMICONDUCTORS.
Descriptive Note:
Annual summary rept. no. 3, Jul 63-Jul 64,
Corporate Author:
ECOLE NORMALE SUPERIEURE PARIS (FRANCE)
Report Date:
1964-10-10
Pagination or Media Count:
29.0
Abstract:
This report describes studies in the following areas 1 Defect mobility in irradiated semiconductors 3 stages of annealing are observed in Silicon between OC and 120C, with different defect mobilities. 2 Radiation enhanced diffusion in silicon new experimental rsults lead to a model of defect diffusion with trapping at impurities 3 Low temperature irradiation of semiconductors thermal, optical and electrical measurements are being prepared. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE