Accession Number:

AD0612090

Title:

RADIATION DAMAGE IN SEMICONDUCTORS.

Descriptive Note:

Annual summary rept. no. 3, Jul 63-Jul 64,

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

• BARUCH,P.

Report Date:

1964-10-10

Pagination or Media Count:

29.0

Abstract:

This report describes studies in the following areas 1 Defect mobility in irradiated semiconductors 3 stages of annealing are observed in Silicon between OC and 120C, with different defect mobilities. 2 Radiation enhanced diffusion in silicon new experimental rsults lead to a model of defect diffusion with trapping at impurities 3 Low temperature irradiation of semiconductors thermal, optical and electrical measurements are being prepared. Author

Descriptors:

• DAMAGE
• SEMICONDUCTORS
• CRYSTAL DEFECTS
• SILICON
• DIFFUSION
• FRANCE
• HEAT OF ACTIVATION
• IMPURITIES
• HIGH TEMPERATURE
• CRYOGENICS
• THERMAL PROPERTIES
• OPTICAL PROPERTIES
• ELECTRON IRRADIATION
• PROTON BOMBARDMENT
• PROTON BOMBARDMENT

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE