Accession Number:

AD0612090

Title:

RADIATION DAMAGE IN SEMICONDUCTORS.

Descriptive Note:

Annual summary rept. no. 3, Jul 63-Jul 64,

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

Report Date:

1964-10-10

Pagination or Media Count:

29.0

Abstract:

This report describes studies in the following areas 1 Defect mobility in irradiated semiconductors 3 stages of annealing are observed in Silicon between OC and 120C, with different defect mobilities. 2 Radiation enhanced diffusion in silicon new experimental rsults lead to a model of defect diffusion with trapping at impurities 3 Low temperature irradiation of semiconductors thermal, optical and electrical measurements are being prepared. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE