Accession Number:

AD0611630

Title:

SEMICONDUCTOR DEVICE CONCEPTS.

Descriptive Note:

Scientific rept. no. 9 (Final) Aug-Oct 64,

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Report Date:

1964-11-01

Pagination or Media Count:

27.0

Abstract:

Mixed crystals of ZnSe and ZnTe have been synthesized by the vapor phase growth method. The ZnSexTe1-x crystals can be made in both n- and p-type conductivity form in the approximate composition range of 0.4 or x or 0.6. The crystals are p-type as grown and can be converted to n-type form by doping with Al. Low resistivity n-type crystals exhibit a donor ionization energy of approximately 0.01 ev. Low resistivity p-type crystals have shown ionization energies between 0.035 and 0.044 ev. P-n junctions fabricated from the grown crystals have shown red electroluminescence with a visibility threshold of about 1.4 volts at room temperature. FM junction laser structures have been assembled and tested. Attempts to produce significant amounts of frequency modulation have thus far been unsuccessful due to excessive photocurrents in the modulating section. Studies on the halogen transport synthesis of GaAs and GaAsxP1-x have continued. A number of GaAs ingots doped with tellurium have been made. No correlation between electrical parameters and threshold currents was found. However, material with high threshold currents appears to have a large number of etch pits and cracks. This is also true for the GaAsxP1-x alloys. It thus appears that strains and imperfections in the crystals affect their laser behavior. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE