Accession Number:

AD0611621

Title:

WARM-CARRIER RESISTIVITY IN IMPURE N-INSB IN A MAGNETIC FIELD,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA

Personal Author(s):

Report Date:

1964-07-20

Pagination or Media Count:

18.0

Abstract:

The influence of a transverse magnetic field on the warm carrier behavior of the conductivity and resistivity is studied for different scattering mechanisms. An electron temperature model of the Shockley type is used throughout. For a calculation of the conductivity, the coefficient Beta of the quadratic deviation from Ohms law vanishes in high magnetic fields. For a calculation of the resistivity it saturates to a constant value not including quantization. Only for polar optical scattering at low temperatures the saturation value has opposite sign to that of Beta in a low magnetic field. The theory is applied to some resistivity measurements in impure n-InSb at 77K. It is concluded that these can be essentially explained by a combination of polar optical scattering and ionized impurity scattering. An explicit account of compensation between donor and acceptor impurities is essential to explain the difference between the results for different samples at magnetic fields above 2 kG, where it is easiest to obtain a good quantitative agreement with experiment. The low magnetic field data are harder to understand, because of the difficulty in describing polar scattering in sufficient detail. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE