Accession Number:

AD0611523

Title:

CERTAIN OPTICAL AND ELECTRICAL PROPERTIES OF THIN INDIUM ANTIMONIDE LAYERS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1965-01-29

Pagination or Media Count:

14.0

Abstract:

This report describes a method of obtaining indium antimonide layers of n-type with a mobility of electrons of up to 8500 sq cmv.sec. Given are results of measuring the temperature dependence of electroconductivity, Hall constant and magneto resistances in the temperature range of from 140-550K, and also light permeability in the range of wave lengths of 0.7 - 8.1 microns. It is shown, that the obtained layers can be used for the manufacture of Halls EMF sensing elements. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE