INVESTIGATION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF JUNCTIONS IN VAPOR-DEPOSITED COMPOUND SEMICONDUCTORS.
Semi-annual scientific rept. no. 1,
SPERRY RAND RESEARCH CENTER SUDBURY MASS
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Germanium was epitaxially deposited on gallium arsenide by means of the hydrogen reduction of GeC14. Above 800C, germanium reacted with the GaAs seed to form a black powder. Proper deposition was observed below about 750C. Nonetheless, cross doping of the Ge layer by gallium was observed even at deposition temperatures as low as 670C the heterojunctions showed tunnel diode characteristics. Deliberately doped junctions of p-Ge on n-GaAs showed the I-V characteristics of Ge junctions, while the photovoltaic response was that of a GaAs junction. Epitaxial lasers were made by the deposition of zinc-doped epitaxial layers on n-type GaAs substrates. It was necessary to codeposit tin along with the zinc. The threshold current density was about 13,000 amps sq. cm. Author