Accession Number:

AD0611194

Title:

SPECTROSCOPY OF POINT DEFECTS,

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

Report Date:

1963-09-15

Pagination or Media Count:

25.0

Abstract:

The absorption spectra of such impurities as oxygen, carbon, and nitrogen are being studied in the lattice of silicon and molecular vibrations are obtained at 9 microns, 12.2 microns, and 10.6 microns, respectively. High density defects, created by irradiation with fast neutrons, polarize the lattice and make it possible to observe the direct photon-phonon interaction. The infrared absorption spectra due to single phonons are composed of bands at 488, 417, and 331, as well as at 140cm, corresponding to modes TO, LO, LA, and TA, respectively. The energies of TO, for example, are determined under high resolution at the point of maximum density of modes at Gamma, L., W, and X. They are 516.5 1, 488.5 1, 474 1, and 447 1. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE