Accession Number:

AD0611146

Title:

STUDY OF THE OPTICAL PROPERTIES OF HIGHLY DOPED AND DEGENERATE SILICON,

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

Report Date:

1963-10-15

Pagination or Media Count:

18.0

Abstract:

An investigation was made of the free carrier absorption, the absorption peak at 2.3 microns, and the energy shift of the fundamental absorption edge. The 2.3 microns peak was attributed to intraband transition. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE