Accession Number:

AD0611145

Title:

SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON,

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s):

Report Date:

1963-09-15

Pagination or Media Count:

18.0

Abstract:

Theoretical considerations on the photon phonon interaction and experimental results concerning fast neutron irradiated silicon have been presented. The infrared absorption spectrum contains absorption bands at 488, 417, 332, and presumably at 140cm attributed to a single phonon absorption process connected with the excitation of the fundamental modes, TO, LO, LA, and TA, respectively. These fundamental modes become active because of the lattice polarization bombardment. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE