Accession Number:

AD0611144

Title:

CRITICAL POINTS OF THE FREQUENCY SURFACES IN THE SILICON CRYSTAL,

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Report Date:

1963-09-15

Pagination or Media Count:

24.0

Abstract:

The one-phonon and two-phonon infra-red absorption spectrum 10-130 microns in silicon crystals reveals a structure due to Van HOVEs critical points for frequency surfaces. From the experimental data it is possible to obtain the precise values of phonon energies for the various branches of the frequency spectrum at the following points in the reduced zone Gamma 0, 0, 0, X1, 0, 0, L12, 12, 12, W1, 12, 0 and Sigma 34, 34, 0. These results agree with a set of critical points for the symmetry properties established on the basis of theoretical, topological and group considerations. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE