RESEARCH ON HETEROJUNCTIONS (GROWTH OF GALLIUM PHOSPHIDE SILICON HETEROJUNCTIONS). PART I.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The report is a summary of experimental progress in continuing research with new semiconductor materials and devices. Specifically described is the investigation of epitaxial techniques for the growth of gallium phosphide on silicon. Open-tube vapor phase transport methods using the reaction of gallium oxide with red phosphorus yield large amounts of vapor grown GaP, but are found to be incapable of producing epitaxial layers on silicon. Similar techniques using PC13 and metallic gallium as the reactants yielded GaP overgrowths on silicon shown by Xray diffraction to be single crystal. Heterojunctions of GaP on 5-ohm cm P-type exhibit photovoltages of 0.17 volts and barrier heights by capacitance measurement of 0.13 volts. Author