Accession Number:

AD0610629

Title:

WIDE BAND GAP SEMICONDUCTORS.

Descriptive Note:

Final rept.,

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• HILL,D. E.
• Stearns,R. I.

Report Date:

1964-06-30

Pagination or Media Count:

35.0

Abstract:

The over-all objective of this program was to supply Lincoln Laboratory with crystals of one or more of the compounds of the class consisting of cubic BP, BAs, AlP and A1As suitable for fabrication into electroluminescent diodes. The goal of the materials preparation work was to develop means of making crystals of maximum purity, size and structural quality, and to prepare crystals containing various dopants. In a corollary program, electrical and optical measurements on the materials were made in order to determine their fundamental properties.

Descriptors:

• CRYSTALS
• SEMICONDUCTORS
• SEMICONDUCTOR DIODES
• ELECTROLUMINESCENCE
• PURIFICATION
• OPTICAL PROPERTIES
• PHYSICAL PROPERTIES
• IMPURITIES
• BORON ALLOYS
• NICKEL ALLOYS
• PHOSPHORUS ALLOYS
• ALUMINUM ALLOYS
• ARSENIC ALLOYS
• ZINC
• CRYSTAL GROWTH
• VAPOR PLATING
• PREPARATION

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE