RADIATION EFFECTS ON FIELD-EFFECT TRANSISTORS, PART I.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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Several varieties of junction gate field-effect transistors were studied to determine transient drain currents upon exposure to single pulses of bremsstrahlung from the White Sands linear accelerator. Data obtained indicate that the transient currents are dependent on a the junction volume and b the transconductance. At low gate voltages, where the transconductance is close to its maximum value, the transient I sub D is small compared to the operating I sub D. However, at gate voltages near pinch-off, the transient I sub D is much larger than the operating I sub D and may present problems in switching applications. Author