Accession Number:

AD0609932

Title:

RADIATION EFFECTS ON FIELD-EFFECT TRANSISTORS, PART I.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1964-06-01

Pagination or Media Count:

31.0

Abstract:

Several varieties of junction gate field-effect transistors were studied to determine transient drain currents upon exposure to single pulses of bremsstrahlung from the White Sands linear accelerator. Data obtained indicate that the transient currents are dependent on a the junction volume and b the transconductance. At low gate voltages, where the transconductance is close to its maximum value, the transient I sub D is small compared to the operating I sub D. However, at gate voltages near pinch-off, the transient I sub D is much larger than the operating I sub D and may present problems in switching applications. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE