ELECTRONIC PARTS-ACCELERATED LIFE TESTS.
Final rept. for 31 Jan 63-30 Jan 64,
MOTOROLA INC PHOENIX ARIZ
Pagination or Media Count:
The purpose of this effort was to investigate and develop test measurement techniques to controllably accelerate aging of silicon epitaxial planar transistors and to empiri cally determine a linear equation relating stress factors, environmental tests, and operating life tests, thereby making it possible to predict the reliability of these transistors. A total of 4265 PNP type 2N1132 transistors were used as the vehicles for this program. Summaries of the results of step-stress tests, operating life tests, environmental tests, and matrix test are presented. Analysis of these test results with estimated acceleration factors, failure rates, and parameter distribution and stability plots are also presented. Important conclusions resulting from the tests completed along with recommendations of areas in which additional studies might be pursued to obtain a better method of transistor reliability prediction and measure are contained in the report. Author