CRYOELECTRIC RANDOM ACCESS MEMORY, PHASE II 10(9) BIT MEMORY.
Final rept. for 1 Mar 63-1 Mar 64,
RCA LABS PRINCETON N J
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This report covers the work performed under Phase II of a contemplated three-phase program to develop the theory and technology necessary for the manufacture of billion-bit cryoelectric memories. Further advances in the theoretical understanding of memory operation have clearly delineated the requirements of the fabrication effort. Tests of the many samples made during the year have established that the matching of memory planes with the necessary cryotron trees is practical. Phase II closed with the successful testing of a 128 by 128 memory plane containing 16,384 cells and 508 cryotrons in the trees. Only a problem with unexpectedly low sense signals from the center portion of the plane prevented the stacking of a group of these planes. Improved high-speed evaporation plants have greatly increased the yield of experimental samples and improved their quality. Continued advances in mask fabrication techniques have provided methods that are suitable for the finer patterns required for 512 by 512 and 1024 by 1024 planes. Related work on high-speed selection trees employing cryotrons is reported. It is shown that cryotrons are suitable for this application but further work is necessary to reduce the heat dissipation. Author