STUDY OF COMPREHENSIVE FAILURE THEORY.
Interim rept. for 28 Feb - 25 Jun 64,
IIT RESEARCH INST CHICAGO ILL
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Studies of failure mechanisms in metal film resistors are reported. Oxidation and precipitation are the principal first order mechanisms responsible for changes in resistance with time and temperature. It is shown that the gamma phase Ni3A1 structure precipitates in the thin films studied in a metallurgically consistent way. Oxidation has been seen to consist of particulate growth, with some evidence that film growth also occurs. Kinetics for the different processes appear to be distinctly different. With a region of essentially no change appearing to correspond to uniform oxide growth. The processes investigated have been applied to the mathematical model of resistor behavior. The basic model is in process of revision to account for such factors as non-uniform film thickness, plaque oxidation, etc. Approximations to account for these processes are presented. Author