RADIATION EFFECTS PARAMETERS IN NAP APPLICATIONS.
Final rept. for Jun 63-Oct 64,
BENDIX CORP ANN ARBOR MICH BENDIX SYSTEMS DIV
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The radiation effects caused by different neutron-energy spectra and neutron-to-gamma flux ratios have been determined for several silicon transistors. Tests con ducted on four planar transistor types 2N709, 2N914, 2N1711, and 2N2894 showed that neutron-to-gamma ratio effects are most significant at low radiation exposures. At these exposures, the damage from gamma radiation may be a significant fraction of the total radiation damage. At higher radiation exposures, neutron effects predominate, and the neutron-spectrum effects may be significant. Calculations of displacement-induced damage showed qualitative but not quantitative agreement with the results of reactor tests. It was also found that other parameters have important effects on the radiation damage observed. In particular, electrical measurement and operating conditions during irradiation can have at least as much effect as do neutron-spectrum or neutron-to-gamma ratio variations. Author