Accession Number:

AD0609066

Title:

Failure Mechanisms at Metal-Dielectric Interfaces

Descriptive Note:

Technical Report,06 Mar 1964,05 Jun 1964

Corporate Author:

MOTOROLA INC PHOENIX United States

Personal Author(s):

Report Date:

1964-10-01

Pagination or Media Count:

56.0

Abstract:

The interface between a metal and a dielectric is representative of the type of interface found in microelectronic circuitry. Capacitors using thin film dielectrics have been used as a means of studying the changes induced in a metal-dielectric interface by electrical and thermal stress. Thin film capacitors which were exposed to 100 percent R. H. before top electrode evaporation showed larger changes under stress than similar units which were heated prior to electrode deposition. In general, all capacitors decreased in capacitance, dissipation factor and T.C.C. after stressing. Thin film capacitors stressed at 80 percent R.H. and 40 volts d.c. showed only minor changes in electrical properties. High temperature stress studies of thin film capacitors have been initiated. Thin film anodized Ta2O5 capacitors have shown little change in electrical properties under low temperature stress. Ta2O5 capacitors have been prepared for radioactive tracer studies, and will be stressed at higher levels than the first group. Preliminary study indicates that radioactive tracer techniques may be used in the study of diffusion occurring at the metal-dielectric interfaces, where anodized Ta2O5, SiO2 thermally grown on a silicon metal, and gas plated boro alumina silicate glass film are the dielectrics.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE