Accession Number:

AD0609065

Title:

DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.

Descriptive Note:

Quarterly technical documentary rept. no. 2 (Final), 29 Jan-28 Apr 64,

Corporate Author:

MOTOROLA INC PHOENIX ARIZ

Personal Author(s):

Report Date:

1964-10-01

Pagination or Media Count:

63.0

Abstract:

Additional experimental work has been done to study the surface effects on bipolar and unipolar devices, some with metal - oxide - silicon structures. The results are related to the models presented in previous reports. An additional mechanism is proposed for changes which occur in metal - oxide - silicon structures in which a field is present perpendicular to the surface. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE