DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.
Quarterly technical documentary rept. no. 2 (Final), 29 Jan-28 Apr 64,
MOTOROLA INC PHOENIX ARIZ
Pagination or Media Count:
Additional experimental work has been done to study the surface effects on bipolar and unipolar devices, some with metal - oxide - silicon structures. The results are related to the models presented in previous reports. An additional mechanism is proposed for changes which occur in metal - oxide - silicon structures in which a field is present perpendicular to the surface. Author