PRODUCTION ENGINEERING MEASURE TO INCREASE THE RELIABILITY OF THE TRANSISTOR TYPE 2N2034.
Quarterly progress rept. no. 5, 1 Jul-30 Sep 64,
SILICON TRANSISTOR CORP GARDEN CITY N Y
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Improvements were found in the electrical performance of the Transistor Type 2N2034 as a result of the process improvements. The limits of some of the electrical parameters have been tightened in a proposed military specification of this device. A failure acceleration rate of 12 for every increase of 5 watts dissipation had been found from the results of power stresses at three different levels. This leads to the prediction that the failure rate at 90 per cent confidence would be .05 per cent per 1000 hours when the device is subjected to a life test with power dissipation of 2.5 watts at case temperature of 100C. In order to verify this prediction, a life test program at 10-watt dissipation level has been planned. Author