RESEARCH STUDIES IN THE ROLE OF ADDITIVES IN THE LOW TEMPERATURE CESIUM DIODE.
SPERRY RAND CORP LONG ISLAND CITY N Y FORD INSTRUMENT DIV
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The techniques developed under a previous contract AF19 604-8486 were refined which allowed the addition of controlled amounts of Penning mixture 99.9 Ne, 0.1 Ar to both planar and cylindrical cesium vapor diodes using impregnated tungsten Philips Type B emitters in the 1000C-1200C range. In the pressure region of 6.5 Torr, considerably improved performance resulted in the planar diodes at cesium bulb temperatures between 100C and 150C. Consideration is given to possible increased barium coverage on the emitter surface, resulting from the additive over pressure, as a mechanism for the enhancement. Author