Accession Number:

AD0608509

Title:

EXCESS NOISE IN SEMICONDUCTORS.

Descriptive Note:

Annual summary rept. no. 9, 15 Nov 63-14 Nov 64,

Corporate Author:

IIT RESEARCH INST CHICAGO ILL

Personal Author(s):

Report Date:

1964-11-09

Pagination or Media Count:

43.0

Abstract:

Both the forward current noise spectrum and the optical emission noise spectrum of a GaAs luminescent diode exhibit characteristic relaxation times of 13 and 2.3 milliseconds. Presumably, these are related to injected carrier transitions associated with photon emission. In further confirmation of this interpretation is the fact that the low frequency noise level of both spectra is several orders of magnitude greater than shot noise associated with the junction current. The reverse current noise spectrum is simple 1f noise over the frequency interval from 10 to 10,000 cps. No change in character of the spectrum is observed under optical illumination of the junction, so that the effect is attributed to reverse leakage currents. To define more clearly the optical emission noise spectrum, it is necessary to reduce the optical detector noise level. Experiments are underway crosscorrelating the outputs of two photodetectors, which reduces the influence of internal detector noise. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE