Accession Number:

AD0608456

Title:

FAILURE MECHANISMS IN SILICON SEMICONDUCTORS.

Descriptive Note:

Quarterly status technical documentary rept. no. 5, 1 Mar-1 Jun 64,

Corporate Author:

SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF

Personal Author(s):

Report Date:

1964-10-01

Pagination or Media Count:

78.0

Abstract:

This report is divided into two main sections, both dealing with failure mechanisms in silicon semiconductors. The first part treats investigations of surface phenomena in oxide-protected silicon devices. The problem of ion motion on oxide layers is studied in considerable detail. The conductivity of oxide layers was measured over extended periods of time. Relaxation effects were observed which are attributed to the motion of ions on the oxide surface under the influence of an electric field. The second part of this report deals with further investigations of second breakdown in silicon power transistors. Transistors were studied which had localized thin spots intentionally introduced into the structure. In all cases, hot spots were formed to occur at the thin spots. Burn out due to second breakdown, however, did not occur in all cases at the thin spots. Preparation was begun on simplified transistor structures to better study the manner in which hot spots and second breakdown occur, and the role which the base resistance plays in the second breakdown problem. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE