Accession Number:

AD0607566

Title:

THE RELATIONSHIP BETWEEN TRANSISTOR SECONDARY BREAKDOWN PERFORMANCE TO VHF LARGE SIGNAL AMPLIFIER PERFORMANCE,

Descriptive Note:

Corporate Author:

ARMY ELECTRONICS LABS FORT MONMOUTH N J

Personal Author(s):

• Reich,Bernard
• Hakim,Edward B.

Report Date:

1964-06-01

Pagination or Media Count:

20.0

Abstract:

An attempt has been made to find a relationship between transistor secondary breakdown as noted at low fre quencies with the performance of transistors as VHF large signal amplifiers. The study tends to indicate that if secondary breakdown limits the performance of r.f. power transistors, the maximum power output of the device is limited by the d.c. operating point at which secondary breakdown occurs. Upon visual inspection of units destroyed in these experiments, it has been found that consistent metalization failures have occurred in the vicinity of the emitter lead and that failures noted under r.f. conditions have been much more severe than those noted under d.c. burnout conditions. Author

Descriptors:

• *TRANSISTORS
• *TRANSISTOR AMPLIFIERS
• RELIABILITY(ELECTRONICS)
• VERY HIGH FREQUENCY
• PERFORMANCE(ENGINEERING)
• VOLTAGE
• ELECTRIC DISCHARGES
• RADIOFREQUENCY POWER
• RADIOFREQUENCY AMPLIFIERS
• FAILURE(MECHANICS)
• METAL COATINGS
• DIRECT CURRENT

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE