Accession Number:

AD0607561

Title:

SECONDARY BREAKDOWN, RADIATION RESISTANCE AND FREQUENCY RESPONSE OF SILICON TRANSISTORS,

Descriptive Note:

Corporate Author:

ARMY ELECTRONICS LABS FORT MONMOUTH N J

Personal Author(s):

Report Date:

1964-06-01

Pagination or Media Count:

20.0

Abstract:

This report points out the considerations that have to be taken into account when choosing a transistor which has good neutron radiation resistance and, in addition, secondary breakdown performance. There appears to be a point where optimum performance is obtained considering both requirements. However, the representation indicated can only be considered a static case since secondary breakdown is itself dependent on the amount of neutron exposure the device receives. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE