Accession Number:

AD0607426

Title:

FAILURE MECHANISMS IN MICROELECTRONICS.

Descriptive Note:

Final rept.

Corporate Author:

WESTINGHOUSE DEFENSE AND SPACE CENTER BALTIMORE MD

Personal Author(s):

Report Date:

1964-08-01

Pagination or Media Count:

100.0

Abstract:

Investigations were performed on three types of microelectronic devices multiple diode wafers, inversion layer diode amplifiers, and versatile linear amplifiers. Two failure mechanisms were identified and studied in detail unsuspected diffusion barriers from photoetch procedures, and variations in passivation layer properties. The relationship to these, of current amplification beta, or reverse voltage breakdown, of leakage, and other quantities was examined. Each step in microelectronic device fabrication was investigated for its contribution to failure mechanisms. A partially conducting region in the passivating oxide was identified and studied, 300 100 A from the silicon. This contributes to the leakage in microelectronic devices usually attributed entirely to channels in the silicon. Author

Descriptors:

• *SUBMINIATURE ELECTRONIC EQUIPMENT
• SUBMINIATURE ELECTRONIC EQUIPMENT
• SEMICONDUCTOR DIODES
• DISKS
• TRANSISTOR AMPLIFIERS
• SILICON COMPOUNDS
• OXIDES
• SURFACE PROPERTIES
• CHEMICAL MILLING
• RELIABILITY(ELECTRONICS)
• SILICON

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE