Accession Number:

AD0607231

Title:

RESEARCH ON SOLID STATE NOISE DEVICES.

Descriptive Note:

Annual scientific rept. no. 2, 1 Aug 63-31 Jul 64,

Corporate Author:

SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF

Personal Author(s):

• Haitz,R. H.

Report Date:

1964-07-31

Pagination or Media Count:

128.0

Abstract:

The report is concerned with two problems 1 the investigation of the basic mechanisms of avalanche breakdown, and 2 their application to the generation of high amplitude white noise with considerable temperature independence. Of special interest is the frequency range from 40 kc to 200 kc. The design considerations for a noise diode with a low avalanche pulse rate of the order of 10,000sec 1 are discussed. To obtain a low temperature dependence of the noise output the diode is designed such that the avalanche pulse rate is determined by carriers generated by band-to-band tunneling rather than by thermal generation from generation and trapping centers. Design considerations for a noise diode with an avalanche pulse rate of the order of 1,000,000sec -1 are also discussed. The mechanisms of carrier generation within the space charge layer of a p-n junction are studied in order to optimize the diode design with respect to noise amplitude, spectral distribution and temperature dependence. An optical coupling mechanism between avalanche diodes is also investigated. Author

Descriptors:

• *SEMICONDUCTOR DEVICES
• *AVALANCHE DIODES
• NOISE(RADIO)
• CIRCUITS
• OPTIMIZATION
• FIELD THEORY
• ELECTRON TRANSITIONS
• SILICON
• PHOSPHORUS
• VAPOR PLATING
• TEST METHODS
• MANUFACTURING
• ELECTROMAGNETIC PULSES
• OPTICAL PHENOMENA

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE