THE ELECTRICAL BEHAVIOR OF REFRACTORY OXIDES II.
Interim technical rept. for 1 Feb 63-15 Feb 64,
SYSTEMS RESEARCH LABS INC DAYTON OHIO
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The research was directed toward achieving a more fundamental understanding of charge and mass transport mechanisms in refractory metal oxides. Special research apparatus and instrumentation was developed in order to carry out the experimental program. A computeroriented study was conducted to assist in the analysis of dielectric loss data. The program was shown to be successful with a representative set of experimental measurements. The defect structure of monoclinic zirconia was investigated by measuring the oxygen partial pressure dependence of the electrical conductivity and sample weight. Techniques were developed to calculate the degree of non-stoichiometry and the mobility of the charge carriers from electrical and weight change data. ZrO2 was found to be an amphoteric semiconductor at 1000 C with the transition from n-type to p-type conductivity occurring at 10 to the minus 16th power atmospheres. The predominant defect in the oxygen excess region was shown to be completely ionized zirconium vacancies. The positive holes arising from the zirconium vacancies were found to have an extremely small mobility. Author