INTEGRATED UNIJUNCTION TRANSISTOR OSCILLATORS.
Rept. for Jan-Dec 63,
CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB
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In this report, integrated near harmonic oscillators based on Unijunction Transistor UJT action are investigated. Conditions for near harmonic oscillation are established in a form appropriate to the treatment of integrated silicon oscillators. The fundamental aspects of UJT action are examined and a modeling procedure is proposed for use in integrated oscillator design. Finally, a complete design procedure for integrated UJT oscillators is presented and applied to the fabrication of planar diffused silicon realizations. The performance of these oscillators is discussed, and compared with the performance of other lumped and integrable oscillators. Publication of this technical documentary report does not constitute Air Force approval of the reports findings or conclusions. It is published only for exchange and stimulation of ideas. Author