Accession Number:

AD0606797

Title:

LOW TEMPERATURE VAPOR GROWTH STUDIES.

Descriptive Note:

Scientific rept. no. 3,

Corporate Author:

IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s):

Report Date:

1964-06-30

Pagination or Media Count:

206.0

Abstract:

Topics include room temperature polishing of Ge and GaAs using NaOCl solutions high temperature etching of Ge with HI growth rate in the Ge-I2-He-H2 vapor transport system exitaxial Ge growth in the Ge-C12-H2 system Bourdon gauge measurements on the GeCl2 system photochemical etching of Ge and Si with Cl2 optical absorption in several open tube systems transpiration in the Ga-HI-H2 and Ge-HI-H2 systems growth of Si single crystals by the H2 reduction of SiCl4.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE