Accession Number:

AD0606311

Title:

Semiconductor Device Concepts,

Descriptive Note:

Scientific rept. no. 8,

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY N Y

Report Date:

1964-08-01

Pagination or Media Count:

66.0

Abstract:

Studies on the systems CdSCu and CdSAg have led to the following results copper and Ag diffuse very rapidly in CdS even below 500C the segregation coefficient of Ag for CdSCd changes from 5 x 10 to the 7th power to .001 between 500 and 1000C and, the solubility of Ag in CdS depends strongly on the partial pressure of Cd over the crystal. The effect of impurities on the electrical characteristics of ZnSe single crystals are investigated by Hall effect studies coupled with mass spectrometric measurements. Considerable differences in the impurity spectrum as well as the electrical behavior of the crystals were found to exist depending on the starting materials, the crystal growth method, and the purification techniques used. A junction laser structure capable of frequency modulation is discussed. Frequency deviations of the order of 100 Gc at modulation frequencies of several Gc appear reasonable. Modulation signals of 200 volts peak-to-peak are required into a load consisting of a pure capacity of a fraction of a pf.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE