ANALYSIS OF FAILURE MECHANISMS WITH HIGHENERGY RADIATION.
Quarterly rept. no. 2, 1 Apr-30 Jun 62,
HUGHES AIRCRAFT CO FULLERTON CALIF
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This program is being conducted to seek out and analyze some specific modes of failure in semiconductor materials, semiconductor devices, and dielectrics with the use of high-energy radiation. During this reporting period additional surveys were conducted to define more clearly specific problem areas with semiconductor devices and to direct the efforts of this program in order to derive maximum benefit from it. The experimental program on the effects of gamma radiation on germanium and silicon diodes was continued, and silicon PNP transistors were added to this program. A study on surface effects encountered with silicon devices was initiated however, further analytical work with conventional means is required before nuclear methods can be applied effectively. Additional work in connection with failure mechanisms in dielectric materials has been explored, and further progress has been made in the development of a sensitive nuclear-magnetic resonance apparatus. Author