RESEARCH AND DEVELOPMENT FOR SEMICONDUCTOR SURFACE CONTROL AND STABILIZATION.
Scientific rept. no. 1,
MOTOROLA INC PHOENIX ARIZ
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The report describes the progress made during this period in semiconductor surface control and stabilization. The effects of contaminants upon beta and leakage current are discussed. Germanium planar passivation studies are also covered. Work on metal oxide semiconductors MOS and field effect transistors FET is reported. Author