RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR DIODES FOR ELECTRONIC TUNING.
Interim engineering rept. no. 4, 27 Mar-26 Jun 64.
PHILCO CORP LANSDALE PA
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Use of the guard-ring structure, plus processing changes to lower to electrical field at the periphery of the junction, has resulted in a significant increse in the level of breakdown voltage attained in diodes. The feasibility of fabricat ing large-area planar silicon diodes which meet all of the objective electrical specifications for Devices A and B has been established, and in-specification devices have been delivered. Because of the inherent advantages of the planar process, diodes made by this refined planar process are superior to devices made by other technologies. Specifications for pilot production of the required final engineering samples have been established. Author