RESEARCH AND INVESTIGATION OF INVERSE EPITAXIAL UHF POWER TRANSISTORS
Rept. for Jul 1963-Jun 1964
CLEVITE TRANSISTOR PALO ALTO CA SHOCKLEY TRANSISTOR DIV
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The report describes development work toward a 10 watt 500 Mc silicon npn epitaxial transistor. An extensive design theory permits calculation of important material and geometrical parameters to realize a given performance. Diffusion studies produced a greater understanding of the emitter dip effect, but lacked the control necessary for thin, heavily doped layers. Ion bombardment doping and epitaxial base growth are described both these methods are promising but require further development. Devices were produced giving up to 7 watts at 500 Mc with 4 db gain. An important device principle, the shorted emitter, is described. Methods of evaluating contact resistance and designing control structures for diffusion evaluation are discussed.
- Electrical and Electronic Equipment