FOUR-LAYER DIODE DEVELOPMENT PROGRAM.
Final rept. for 7 Mar 63-7 Mar 64,
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
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The report describes the design, development, fabrication and characterization of a high current, high voltage silicon four-layer diode. The main feature of the new four-layer diode is a voltage-current characteristic which is, prior to switching, similar to that of an avalanche diode. This property is achieved by short-circuiting one emitter-base junction. The short-circuiting takes place over the entire area in order to maintain uniform current conduction. Devices switching at 500 volts or higher, with peak pulse current capability of 1000 amperes or more are described. Since series operation of many devices is possible without complex dividing networks, the complexity of pulse modulator circuitry is reduced, and resonantly charged circuits can exhibit a high degree of operating reliability and temperature insensitivity. Author