RESEARCH ON THE INFLUENCE OF SURFACE CONDITIONS ON DIFFUSION IN SILICON.
Final rept. for 16 Jun 61-15 Jun 64,
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
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The purpose of the contract was to study the diffusion of impurities, particularly donors and acceptors, near the surface of silicon as affected by disturbances introduced at the surface before or during diffusion. This goal was achieved by carrying out three major research projects concerned with 1 Ion bombardment and simultaneous doping of silicon in a dc glow discharge. 2 Studies of anomalous diffusion in heavily doped surface layers. 3 Observation of lattice defects such as misfit dislocations near silicon surfaces doped with phosphorus and defects related to surface damage. The results of the investigations are presented in this report.