FAILURE MECHANISMS AT SURFACES AND INTERFACES.
Interim technical documentary rept. no. 3, 1 Jan-1 Apr 64,
GENERAL ELECTRIC CO UTICA N Y
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Certain fabrication details, relevant to the condition of the CdS-SiO interface, have been found to greatly influence the stress sensitivity of thin film field effect devices. This was found to be true for the aging effects resulting from high temperature exposures as well as from electrical stresses. Mechanism identification and suppression of these aging effects in terms of controlled processing techniques may be possible as a result of these findings. The unloaded room temperature stability has reached the 250 day landmark. An exploratory study of the incipient dielectric degradation of code 8871 glass capacitor dielectrics using thin film field effect sensors, has been initiated. Theoretical considerations concerning the migration of sodium and other ions in glass support the soundness of this approach. The mounting of such sensors on 8871 glass ribbon has been achieved and initial measurements are encouraging. Author