Accession Number:

AD0603783

Title:

SEMICONDUCTOR DEVICE CONCEPTS.

Descriptive Note:

Scientific rept. no. 7,

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY N Y

Report Date:

1964-05-05

Pagination or Media Count:

67.0

Abstract:

Studies of the defect chemistry of the II-VI compounds were continued see AD-433 975 and a comparison was made of the electrical behavior of CdTe, CdS, and ZnSe following either thermal firings or 1.5 Mev electron bombardment. The diffusion of Cu into undoped ZnS as well as Cl-doped and Al-doped ZnSe was investigated by radiotracer techniques. The results were used to correlate the electrical and optical activity of some defect centers in II-VI compounds. The halogen transport growth of GaAsxP1-x crystals continued. Laser quality material is being produced, but the ingots, while relatively homogeneous, are polycrystalline. Several ingots of GaAs and GaAsxP1-x were made using a lower furnace temperature. These ingots have large single-crystal regions and are more homogeneously doped than previous ones. Exciton and related luminescence phenomena that occur near the band edge of a semiconductor are discussed and compared with the absorption spectrum. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE