Accession Number:

AD0603751

Title:

SURFACE FIELD EFFECT DEVICE STUDIES FOR HIGH RESISTIVITY GALLIUM ARSENIDE. PART I: SURFACE STATES ON GALLIUM ARSENIDE,

Descriptive Note:

Corporate Author:

CARNEGIE INST OF TECH PITTSBURGH PA

Personal Author(s):

Report Date:

1963-11-01

Pagination or Media Count:

57.0

Abstract:

Surface states on a GaAs 110 surface were studied by capacitance measurements on an MIS metal-insulatorsemicondutor diode. In particular, the small signal high frequency differential capacitance of an Al-evaporated SiOGaAs diode as a function of d.c. bias is presented. This curve is then compared to the theoretical variation of the ideal MIS diode without surface states and the surface state density as a function of position in the bandgap is determined. Results indicate a distribution of states very similar to that determined by Terman Sol. St. Elect., p. 285 and Lehovec Phy. Stat. Sol., 3, p. 447 for the Al-thermally grown SiO2-Si system except for a factor of 10 less states on the GaAs. Contribution of charge due to ionization of bulk traps prohibited the extension of the MIS measurements, which were performed on 0.1 ohm centimeter material, to higher resistivities. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE