Accession Number:

AD0603521

Title:

RESEARCH ON MICROWAVE INTERACTIONS IN SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 4,

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Report Date:

1963-12-15

Pagination or Media Count:

60.0

Abstract:

The first task was to develop three inch long p-n junctions in single crystal silicon which could be incorporated in waveguides as active phase-shifting elements for measurement purposes. Recent advances in the field of ultrasonics have produced direct observation of electronphonon interaction in piezoelectric semiconductors. The most important device to emerge from this work is the ultrasonic piezoelectric semiconductor amplifier. In this device, when the drift velocity of conduction electrons in a piezoelectric semiconducting crystal exceeds the velocity of an acoustic wave traveling in the same direction, energy is transferred from the electrons to the acoustic wave such that acoustic amplification takes place. A shear wave CdS amplifier centered at 48.5 megacycles showed 23 db insertion gain operating in pulsed condition. Related experimental data observed in this amplifier such as gain saturation and limiter action are given. Parts of the amplifier structures such as transducers, bonds, and contacts are discussed as well as experimental measurements on other amplifier structures.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE