Accession Number:

AD0603355

Title:

ENGINEERING SERVICES ON TRANSISTORS.

Descriptive Note:

Quarterly progress rept. no. 4 (Rept. no. 16), 1 Jan-31 Mar 64,

Corporate Author:

BELL TELEPHONE LABS INC MURRAY HILL N J

Report Date:

1964-06-30

Pagination or Media Count:

41.0

Abstract:

This report discusses work on a 6-Gc low-power germanium transistor, the image force dielectric constant for hot electrons in gold n-type silicon Schottky diodes, and aging of silicon resistors. Status of the work on a 6-Gc low-power germanium transistor is reported. Techniques for fabricating the oxide-photoengraved planar structure are evaluated. Results of a computer analysis of effects of header parasitic impedances are presented. Photoelectric measurements of the bias dependence of the potential energy barrier for electrons in gold n-type silicon Schottky diodes show that the value of the image force dielectric constant deduced from direct measurement of the barrier lowering is 12.0 0.5, in close agreement with the infrared dielectric constant of silicon, and independent of the applied field for fields between 10,000 voltscm and 2x100,000 voltscm. Silicon resistors have been aged 1000 hours at 350C. Values remained within about 1 per cent of initial values. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE