Accession Number:

AD0603279

Title:

FAILURE MECHANISMS AT METAL-DIELECTRIC INTERFACES,

Descriptive Note:

Corporate Author:

MOTOROLA INC PHOENIX ARIZ

Personal Author(s):

Report Date:

1964-07-01

Pagination or Media Count:

73.0

Abstract:

Several thin-film gas plated, glass dielectric capacitor model systems were fabricated with combinations of aluminum, gold, and nickel electrode-dielectric interfaces and were electrically characterized. Thin film glass capacitors fabricated with oxygen active metal electrodes i.e. aluminum and nickel exhibit lower loss, smaller frequency dispersion of capacitance, and lower temperature sensitivity of capacitance and dissipation factor than identical capacitors fabricated with an inert metal electrode of gold. Capacitor dielectrics that have been vacuum baked before deposition of the metal film electrode, exhibit optimum electrical characteristics. Exposure of the dielectric surface to ambient conditions or high humidity environments, degrades the initial characteristics of the completed capacitor. Procedures for the use of radioactive isotopes to study diffusion phenomena across metal-dielectric interfaces are described. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE