Accession Number:

AD0603262

Title:

STUDY OF SURFACE STATES IN SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

TYCO LABS INC WALTHAM MASS

Personal Author(s):

Report Date:

1964-07-01

Pagination or Media Count:

31.0

Abstract:

The report presents pertinent experimental procedures, results, and discussion of surface states on 111 surfaces of GaAs. For n-type undoped GaAs, pulsed field effect measurements on the B face yield two levels E1 0.56 eV below the conduction band with a capture cross-section of the order of approx 10 to the -12th power sq cm and E2 0.13 eV below the conduction band with a capture cross-section for electrons of approx. 10 to the -22 power sq cm. Level E1 appears to be a donor state, whereas Ee is identified as an acceptor state. The A face yields a distribution of states of energies in the range of 0.2 eV and 0.6 eV below the conduction band. One level, 0.51 below the conduction band with a capture cross-section for electrons of 10 to the -14 power sq cm, agrees within experimental error with the E1 level on the B face. A correlation between surface state activity and dislocation etch pit density is discussed and further studies are outlined. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE