GROWTH AND CHARACTERIZATION OF SINGLE CRYSTALS OF RARE EARTH COMPOUNDS.
Quarterly technical rept. no. 4,
WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA
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Experimental work was performed in three areas, 1 the growth of single crystals of EuS and other rare earth materials, 2 electrical conduction of La-doped EuS, and 3 magnetic structure in Cr-Te-CrSb solutions. Small crystals of EuS have been grown from the melt. The outstanding features of and the critical conditions for epitaxial growth of single-crystalline films of EuS have been discussed in a paper. Further experiments indicate that neither Cu nor sapphire is suitable as the substrate for the epitaxial growth. A qualitative account has been given of the electrical data for La-doped EuS samples. The basic idea involved in the interpretation is that the radius of the excess electron wave functions surrounding the impurity atoms depends strongly on the magnetization of the host lattice. Both the resistivity anomaly near the Curie temperature and the variation of the Curie temperature with the doping concentration are considered to be indicative of a significant indirect coupling between the excess electrons and the f-shells. Author