Accession Number:

AD0602993

Title:

THE FIRST CZECHOSLOVAKIAN SEMICONDUCTIVE LASER,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1964-07-07

Pagination or Media Count:

5.0

Abstract:

Introduced is a laser, operating on the principle of using a gallium arsenide crystal, with transition transformation of the type similar to the semiconductor regulators. The laser emits stimulated radiation in near infrared zone at about 0.85 micron. A GaAs sample was prepared in dimensions of 0.2 x 0.6 mm, submerged in gaseous nitrogen and worked with current pulses of several microns duration the processing of the crystal and its cultivation was done with optical precision.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE