THE FIRST CZECHOSLOVAKIAN SEMICONDUCTIVE LASER,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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Introduced is a laser, operating on the principle of using a gallium arsenide crystal, with transition transformation of the type similar to the semiconductor regulators. The laser emits stimulated radiation in near infrared zone at about 0.85 micron. A GaAs sample was prepared in dimensions of 0.2 x 0.6 mm, submerged in gaseous nitrogen and worked with current pulses of several microns duration the processing of the crystal and its cultivation was done with optical precision.