Accession Number:

AD0602801

Title:

DEFECT STRUCTURES IN QUENCHED AND ANNEALED GAAS CRYSTALS,

Descriptive Note:

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1964-06-01

Pagination or Media Count:

18.0

Abstract:

Lattice parameter measurements have been made by the Kossel-line technique on quenched gallium arsenide crystals. Samples quenched from temperatures above 1000C showed an increase in lattice parameter. The change with temperature has an enthalpy of 2.0 ev and is attributed to the formation of vacancies. Room-tempera ture annealing of the defects is also shown, and is seen to proceed in several stages. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE