ENGINEERING SERVICES ON TRANSISTORS.
Rept. no. 15 (Final), 1 Apr 60-31 Dec 63,
BELL TELEPHONE LABS INC MURRAY HILL N J
Pagination or Media Count:
The report describes all the technical effort expended in the development of high-frequency, high power germanium transistors. The areas included are 1 general discussion of the high-frequency transistor development project 2 design theory for high-frequency germanium power transistors of conventional mesa structure, and for planar interdigitated structures 3 discussion of developments in planar photoengraved microwave power transistor technology, with a specific fabrication sequence 4 fabrication technology for an improved coaxial power header designed for microwave transistors 5 presentation of high-frequency measurements on representative development model transistors with a 1-Gc rf output up to 370 mw 6 overall summary of work. Although the stated objective requirements were not fully met, significant technical progress was made in planar fabrication technology, high-frequency header design, low-resistance electrical contacts, and power transistor design theory. The 1-watt, 1-Gc objective is believed achievable along the general lines of development pursued in the latter period of this contract. Author