INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.
Quarterly progress rept. no. 6, 16 Feb-15 May 64,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
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Equations expressing tube life as a function of initial square root clean-up rate were derived. Validity of these equations was demonstrated by application to actual life test data. The use of thin metallic films to control gas clean-up in quartz tubes was investigated. Preliminary results with argon at room temperature indicate that an order of magnitude reduction in square root clean-up rate can be achieved by using a thin tungsten film as a diffusion barrier. Tungsten film erosion by the discharge was inhibited by the use of a second thin film of either tungsten oxide or silicon dioxide. Data obtained for the sorption of hydrogen in OFHC copper indicate that hydrogen diffuses into the metal bulk at a rapid rate compared with the observed rates for inert gases in quartz. Hydrogen was found to have an activation energy of 5.7K calmole for diffusion in OFHC copper. Author