Accession Number:

AD0602724

Title:

INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.

Descriptive Note:

Quarterly progress rept. no. 6, 16 Feb-15 May 64,

Corporate Author:

MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s):

Report Date:

1960-06-24

Pagination or Media Count:

39.0

Abstract:

Equations expressing tube life as a function of initial square root clean-up rate were derived. Validity of these equations was demonstrated by application to actual life test data. The use of thin metallic films to control gas clean-up in quartz tubes was investigated. Preliminary results with argon at room temperature indicate that an order of magnitude reduction in square root clean-up rate can be achieved by using a thin tungsten film as a diffusion barrier. Tungsten film erosion by the discharge was inhibited by the use of a second thin film of either tungsten oxide or silicon dioxide. Data obtained for the sorption of hydrogen in OFHC copper indicate that hydrogen diffuses into the metal bulk at a rapid rate compared with the observed rates for inert gases in quartz. Hydrogen was found to have an activation energy of 5.7K calmole for diffusion in OFHC copper. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE