A FUNDAMENTAL STUDY OF EPITAXY BY FLASH EVAPORATION.
Semi-annual scientific rept. no. 2,
PHILCO CORP BLUE BELL PA
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A study was made of the impurity doping of flash evaporated epitaxial films of III- V semiconductors. Homo- and heterojunctions were prepared and their electrical character istics determined. The germanium - germanium epitaxial system was studied so that certain parameters involved in in situ doping by flash evaporation could be determined more readily. An investigation was made of the direct and indirect epitaxy of compound semiconductors on mica substrates. Author