SUBSTRUCTURED P-N TUNNEL JUNCTION FOR MICROWAVE GENERATION.
Final rept. Jun 62-Apr 64,
VARIAN ASSOCIATES PALO ALTO CALIF
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The object of this contract was the construction of selfstabilized tunnel diodes, that is, of tunnel diodes in which the d-c stabilization circuitry has been built into the diode body itself by sub-structuring the pn junction into portions with negative and with positive local conductivities. Such tunnel diode configurations should eventually have been capable of being the microwave equivalents of reflex klystrons, with similar power outputs and frequencies. The experimental techniques to achieve this goal fell more or less naturally into two major categories 1 Techniques to produce thin 1 micron degenerately doped semiconductor layers, as the basis for the sub-structured junctions 2 microelectronic techniques to produce the diode structure itself, on the above layers. The problems in the second category were essentially solved, those in the first category were not. Several techniques were tried Diffusion, infinite source and thin source liquid epitaxy, all with germanium, and diffusion and vapor epitaxy with gallium arsenide all failed. Author